Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor

ABSTRACT

Disclosed are embodiments of a method of forming, on an SOI wafer, a planar FET with embedded and faceted source/drain stressors. The method incorporates a directional ion implant process to create amorphous regions at the bottom surfaces of source/drain recesses in a single crystalline semiconductor layer of an SOI wafer. Then, an etch process selective to different crystalline planes over others and further selective to single crystalline semiconductor material over amorphous semiconductor material can be performed in order to selectively adjust the shape (i.e., the profile) of the recess sidewalls without increasing the depth of the recesses. Subsequently, an anneal process can be performed to re-crystallize the amorphous regions and an epitaxial deposition process can be used to fill the recesses with source/drain stressor material. Also disclosed are embodiments of a planar FET structure and a design structure for the planar FET.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. Pat. No. 7,951,657, Issued May31, 2011, the complete disclosure of which, in its entirety, is hereinincorporated by reference.

BACKGROUND

1. Field of the Invention

The embodiments of the invention generally relate to planar field effecttransistors (FETs) and, more particularly, to a method of forming aplanar FET with embedded and faceted source/drain stressors on asilicon-on-insulator (SOI) wafer, a planar FET structure and a designstructure for the planar FET.

2. Description of the Related Art

Charge carrier mobility impacts current flowing through the channelregion of field effect transistors (FETs). That is, in n-type fieldeffect transistors (NFETS) current flow is proportional to the mobilityof electrons in the channel region, whereas in p-type field effecttransistors (PFETs) current flow is proportional to the mobility ofholes in that channel region. Stress can be imposed upon on the channelregion in order to adjust carrier mobility and, thereby, adjust currentflow. Specifically, compressive stress on the channel region of a PFETcan enhance hole mobility and, thereby increase drive current.Contrarily, tensile stress on the channel region of an NFET can enhanceelectron mobility and, thereby increase drive current.

Various stress engineering techniques are known for imparting thedesired stress on PFET and NFET channel regions including, but notlimited to, the use of source/drain stressors. For example, as discussedin U.S. Pat. No. 6,885,084 of Murthy et al. issued on Apr. 26, 2005 andincorporated herein by reference, a compressive stress (i.e., auni-axial compressive strain parallel to the direction of the current)can be created in the channel region of a planar PFET by forming thesource/drain regions with an epitaxially grown alloy of, for example,Silicon and Germanium. Similarly, a tensile stress (i.e., a uni-axialtensile strain parallel to the direction of the current) can be createdin the channel region of a planar NFET by forming the source/drainregions with an epitaxially grown alloy of, for example, Silicon andCarbon. Additionally, in both PFETs and NFETs the shape (i.e., theprofile) of the interface between the source/drain stressors and thechannel region can have an impact on the stress imparted on the channelregion. For example, on bulk wafers, increased stress can be imparted onthe channel region of a FET, if the source/drain stressor material isepitaxially grown in recesses having faceted sidewalls adjacent to thechannel region. Unfortunately, this technique is incompatible withsilicon-on-insulator (SOI) wafers and, more particularly, incompatiblewith current state of the art thin SOI (e.g., 45-110 nm SOI) wafers andultra-thin SOI (e.g., sub-45 nm SOI) wafers.

SUMMARY

In view of the foregoing, disclosed herein are embodiments of a methodof forming, on a silicon-on-insulator (SOI) wafer, a planar field effecttransistor (FETs) with embedded and faceted source/drain stressors. Themethod embodiments can incorporate a directional ion implant process tocreate amorphous regions at the bottom surfaces of source/drain recessesin a single crystalline semiconductor layer of an SOI wafer. Then, anetch process selective to different crystalline planes over others andfurther selective to single crystalline semiconductor material overamorphous semiconductor material can be performed in order toselectively adjust the shape (i.e., the profile) of the recess sidewallswithout increasing the depth of the recesses. Subsequently, an annealprocess can be performed to re-crystallize the amorphous regions and anepitaxial deposition process can be used to fill the recesses withsource/drain stressor material. Creation of the amorphous regions at thebottom surfaces of the recesses prior to etching the recess sidewallsensures that enough semiconductor material will remain below therecesses to seed epitaxial deposition of the source/drain stressormaterial. Also disclosed are embodiments of a planar FET structure and adesign structure for the planar FET.

Embodiments of the method of forming a planar FET, as disclosed herein,can comprise providing an SOI wafer comprising: a substrate, aninsulator layer on the substrate and a single crystalline semiconductorlayer on the insulator layer. A first etch process can be performed inorder to form recesses in the single crystalline semiconductor layer onopposing sides of a designated channel region such that sidewalls of therecesses adjacent to the channel region have a first profile and suchthat bottom surfaces of the recesses are separated from the insulatorlayer by a predetermined distance (e.g., a distance of at least 10 nm).This first etch process can, for example, comprise an isotropic etchprocess that results in recess sidewalls with a curved profile.Alternatively, this first etch process can comprise an anisotropic etchprocess that results in a recess sidewalls that have a normal file(i.e., perpendicular profile).

After the first etch process is performed, a dopant can be implantedinto the single crystalline semiconductor layer through the bottomsurfaces of the recesses so to form, within the single crystallinesemiconductor layer immediately adjacent to and aligned with the bottomsurfaces, amorphous regions. This implant process can be performed sothat the amorphous regions each have a thickness that is less than thedistance separating the bottom surfaces of the recesses and theinsulator layer and, thus, so that the amorphous regions do not contactthe insulator layer. For example, if as mentioned above, the distancebetween the bottom surfaces of the recesses and the insulator layer isat least 10 nm, then the implant process can be performed such that theamorphous regions have a thickness that is less than approximately 10nm.

Following the implant process, a second etch process can be performedthat selectively etches different crystalline planes of the singlecrystalline semiconductor layer at the sidewalls of the recesses overothers in order to change the first profile to a second profile (e.g., afaceted profile) that is different from the first profile. This secondetch process can further be performed so that it selectively etches thesidewalls of the recess (i.e., the single crystalline semiconductorlayer at the sidewalls of the recesses) over the bottom surfaces (i.e.,over the amorphous regions at the bottom surfaces) in order to keep thedistance separating the bottom surfaces of the recesses and theinsulator layer essentially the same (e.g., at approximately 10 nm ormore).

After the second etch process, an anneal process can be performed inorder to re-crystallize the amorphous regions, leaving correspondingdoped crystallized regions within the single crystalline semiconductorlayer. Then, additional processing can be performed in order to completethe FET structure, including epitaxially growing, in the recesses,source/drain semiconductor material pre-selected to impart a desiredstress on the channel region.

Also disclosed herein are embodiments of a planar FET formed accordingto the method embodiments described above. This FET can comprise asubstrate and an insulator layer on the substrate. The FET can furthercomprise a single crystalline semiconductor layer on the insulatorlayer. The semiconductor layer can comprise a channel region, recesseswith faceted sidewalls on opposing sides of the channel region and dopedregions below the recesses. Specifically, the semiconductor layer cancomprise recesses. The recess can be positioned at the top surface ofthe semiconductor layer and can have inner sidewalls positionedlaterally adjacent to the channel region with each inner sidewall havinga faceted profile. The recesses can further have bottom surfacesseparated from the insulator layer by a predetermined distance (e.g., adistance of at least 10 nm). Additionally, the semiconductor layer canalso comprise doped regions. The doped regions can be positionedimmediately adjacent to and aligned with the bottom surfaces only of therecesses. Thus, the doped regions are positioned between the bottomsurfaces of the recesses and the insulator layer, but not between theinner sidewalls of the recesses and the channel region. The thickness ofthe doped regions can be less approximately 10 nm and, moreparticularly, can be less than the distance separating the bottomsurfaces of the recesses and the insulator layer such that the dopedregions do not contact the insulator layer. The FET can further compriseembedded source/drain regions within the recesses. Specifically, the FETcan comprise an epitaxially grown layer of semiconductor material thatis within and fills the recesses. Depending upon the FET type, thesemiconductor material can be doped with p-type or n-type source/draindopants and further can comprise a material specifically pre-selected soas to impart either compressive stress or tensile stress on the channelregion.

Also disclosed herein are embodiments of a design structure associatedwith the above-described planar FET. This design structure can betangibly embodied in a machine readable medium for designing,manufacturing, and/or testing an integrated circuit and can comprise atleast instructions that, when executed by a computer-aided designsystem, generate a machine-executable representation of theabove-described planar FET.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The embodiments of the invention will be better understood from thefollowing detailed description with reference to the drawings, which arenot necessarily drawing to scale and in which:

FIG. 1 is a schematic cross-section diagram illustrating an embodimentof a planar field effect transistor;

FIG. 2 is a flow diagram illustrating an embodiment of a method offorming the planar field effect transistor of FIG. 1;

FIG. 3 is a schematic cross-section diagram illustrating a partiallycompleted planar field effect transistor formed according to the methodof FIG. 2;

FIG. 4 is a schematic cross-section diagram illustrating a partiallycompleted planar field effect transistor formed according to the methodof FIG. 2;

FIG. 5A is a schematic cross-section diagram illustrating a partiallycompleted planar field effect transistor formed according to the methodof FIG. 2;

FIG. 5B is a schematic cross-section diagram illustrating a partiallycompleted planar field effect transistor formed according to the methodof FIG. 2;

FIG. 6 is a schematic cross-section diagram illustrating a partiallycompleted planar field effect transistor formed according to the methodof FIG. 2;

FIG. 7 is a schematic cross-section diagram illustrating a partiallycompleted planar field effect transistor formed according to the methodof FIG. 2;

FIG. 8 is a schematic cross-section diagram illustrating a partiallycompleted planar field effect transistor formed according to the methodof FIG. 2; and

FIG. 9 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test.

DETAILED DESCRIPTION

The embodiments of the invention and the various features andadvantageous details thereof are explained more fully with reference tothe non-limiting embodiments that are illustrated in the accompanyingdrawings and detailed in the following description.

As mentioned above, charge carrier mobility impacts current flowingthrough the channel region of field effect transistors (FETs). That is,in n-type field effect transistors (NFETS) current flow is proportionalto the mobility of electrons in the channel region, whereas in p-typefield effect transistors (PFETs) current flow is proportional to themobility of holes in that channel region. Stress can be imposed upon onthe channel region in order to adjust carrier mobility and, thereby,adjust current flow. Specifically, compressive stress on the channelregion of a PFET can enhance hole mobility and, thereby increase drivecurrent. Contrarily, tensile stress on the channel region of an NFET canenhance electron mobility and, thereby increase drive current.

Various stress engineering techniques are known for imparting thedesired stress on PFET and NFET channel regions including, but notlimited to, the use of source/drain stressors. For example, as discussedin U.S. Pat. No. 6,885,084 of Murthy et al. issued on Apr. 26, 2005 andincorporated herein by reference, a compressive stress (i.e., auni-axial compressive strain parallel to the direction of the current)can be created in the channel region of a planar PFET by forming thesource/drain regions with an epitaxially grown alloy of, for example,Silicon and Germanium. Similarly, a tensile stress (i.e., a uni-axialtensile strain parallel to the direction of the current) can be createdin the channel region of a planar NFET by forming the source/drainregions with an epitaxially grown alloy of, for example, Silicon andCarbon.

Additionally, in both PFETs and NFETs the shape (i.e., the profile) ofthe interface between the source/drain stressors and the channel regioncan have an impact on the stress imparted on the channel region. Forexample, on bulk wafers, increased stress can be imparted on the channelregion of a FET, if the source/drain stressor material is epitaxiallygrown in recesses having faceted sidewalls adjacent to the channelregion. Unfortunately, this technique is incompatible withsilicon-on-insulator (SOI) wafers and, more particularly, incompatiblewith current state of the art thin SOI (e.g., 45-110 nm SOI) wafers andultra-thin SOI (e.g., sub-45 nm SOI) wafers.

Specifically, SOI wafers are typically formed to have horizontalsurfaces (i.e., lateral surfaces) with a {100} crystalline orientation.In order to form recesses with faceted sidewalls on such SOI wafers,multiple etch processes are generally required. A first etch processcreates the initial recesses (i.e., trenches, openings, etc.). Followingthis first etch process, the bottom surfaces of the recesses will have a{100} orientation and the sidewalls of the initial recesses will have acertain profile (e.g., curved or normal) depending upon the type of etchprocess used. A second different etch process is then used to change theprofile of the sidewalls to a faceted profile. However, since the bottomsurfaces and sidewalls of the recesses necessarily have differentcrystalline orientations and since different crystalline planes etch atdifferent rates (e.g., {100} orientation surfaces etch at significantlyfaster rates than {110} orientation surfaces, which etch at faster ratesthan {111} orientation surfaces), the bottom surfaces of the recesseswill continue to be etched away during the second etch process and at afaster rate than the sidewalls. Consequently, with thin and ultra-thinSOI wafers, by the time the second etch process is completed (i.e., bythe time the faceted profile is created), the insulator layer is exposedat the bottom surfaces of the recesses. Unfortunately, without at leasta thin seed layer at the bottom surfaces of the recesses (i.e., someremaining portion of the single crystalline semiconductor layer) theepitaxial growth process used to fill the recesses can not beaccomplished.

In view of the foregoing, disclosed herein are embodiments of a methodof forming, on a silicon-on-insulator (SOI) wafer, a planar field effecttransistor (FETs) with embedded and faceted source/drain stressors. Themethod embodiments can incorporate a directional ion implant process tocreate amorphous regions at the bottom surfaces of source/drain recessesin a single crystalline semiconductor layer of an SOI wafer. Then, anetch process selective to different crystalline planes over others andfurther selective to single crystalline semiconductor material overamorphous semiconductor material can be performed in order toselectively adjust the shape (i.e., the profile) of the recess sidewallswithout increasing the depth of the recesses. Subsequently, an annealprocess can be performed to re-crystallize the amorphous regions and anepitaxial deposition process can be used to fill the recesses withsource/drain stressor material. Creation of the amorphous regions at thebottom surfaces of the recesses prior to etching the recess sidewallsensures that enough semiconductor material will remain below therecesses to seed epitaxial deposition of the source/drain stressormaterial. Also disclosed are embodiments of a planar FET structure and adesign structure for the planar FET.

More particularly, disclosed herein are embodiments of a method offorming a planar FET 100 with embedded and faceted source/drainstressors 190 (as shown in FIG. 1 and described in detail below).Referring to FIG. 2, the method embodiments comprise providing asilicon-on-insulator (SOI) wafer (202, see FIG. 3). This SOI wafer cancomprise a substrate 105 (e.g., a p− silicon substrate). The SOI wafercan further comprise an insulator layer 110 (e.g., a buried oxide (BOX)layer or other suitable insulator layer) on the substrate 105. The SOIwafer can further comprise a single crystalline semiconductor layer 115(e.g., a single crystalline silicon layer). The semiconductor layer 115can be “thin” (i.e., can have a thickness 170 between 45-110 nm) or“ultra-thin” (i.e., can have a thickness 170 that is less than 45 nm).

Next, conventional processing can be performed in order to form shallowtrench isolation (STI) regions 120 to define a device region within thesemiconductor layer 115, to form wells (not shown), to form a gate stack140 (e.g., a gate dielectric layer 141, a gate conductor layer 142 onthe gate dielectric layer 141 and a cap layer 143, such as a nitride caplayer, on the gate conductor layer 142) over a designated channel region150 within the device region, to form gate sidewall spacers 145 onopposing sides of the gate stack 140, etc. (204, see FIG. 4).Optionally, source/drain extension regions and/or halo regions can alsobe formed, depending upon the integration scheme (e.g., late or early).The details of the above-mentioned conventional processing arewell-known and are omitted to allow the reader to focus on the salientaspects of the embodiments described herein.

Next, a first etch process can be performed in order to form, for theembedded source/drain regions, initial recesses 125 (i.e., trenches,opening, etc.) in the single crystalline semiconductor layer 115 onopposing sides of the designated channel region 150 (206, see FIGS. 5Aand 5B). Specifically, this first etch process can be performed suchthat the inner sidewalls 137 of the recesses 125 adjacent to the channelregion 150 have a first profile 535. For example, the first etch processcan comprise an isotropic process (e.g., an isotropic wet etch process)such that the first profile 505 will comprise a curved profile (207, seeFIG. 5A). Alternatively, the first etch process can comprise ananisotropic dry etch process (e.g., a reactive ion etch (RIE) process)such that the first profile 535 will be a normal profile relative to thewafer (i.e., perpendicular to the wafer) (208, see FIG. 5B). This firstetch process can further be performed such that bottom surfaces 136 ofthe recesses 125 are separated from the insulator layer 110 by apredetermined distance 160 (e.g., a distance of at least 10 nm). Thatis, the first etch process can be performed such that it stops apredetermined distance above the insulator layer 110.

After the first etch process is performed, a dopant 631 can be implantedinto the single crystalline semiconductor layer 115 through the bottomsurfaces 136 of the recesses 125 so to form, within the singlecrystalline semiconductor layer 115 immediately adjacent to and alignedwith the bottom surfaces 136 of the recesses 125, amorphous regions 630(210, see FIG. 6). This implant process can comprise a directional ionimplantation process, which only implants the dopant 631 into exposedlateral surfaces of the single crystalline semiconductor layer 115. Thisdirectional ion implantation process can further be controlled toselectively limit the thickness 165 of the amorphous regions 630 so thatit is less than the distance 160 separating the bottom surfaces 136 ofthe recesses 125 from the insulator layer 110 (i.e., so that theamorphous regions 630 do not contact the insulator layer 110) (211).That is, so that the depth of the implant does not reach the insulatorlayer. For example, a gas cluster ion beam implantation process can beused to limit the thickness of the doped regions to less than 10 nm. Forboth NFETs and PFETs, the dopant can be selected from a group of dopantsincluding, but not limited to, Silicon, Germanium, Xenon, Argon,Nitrogen, Fluorine, Carbon, Sulfur, Oxygen, Neon, Krypton, etc. (212).Alternatively, the dopant can be FET-specific. For example, for PFETs,the dopant can also comprise Boron or Indium, whereas, for NFETS, thedopant can also comprise Arsenic, Phosphorous, or Antimony (212). Itshould be noted that, for illustration purposes, this process is shownin FIG. 6 as being performed on the structure of FIG. 5A. However, itwould be equally applicable to the structure of FIG. 5B.

After the amorphous regions 630 are formed, a second etch process can beperformed that selectively etches different crystalline planes of thesingle crystalline semiconductor layer at the sidewalls 137 of therecesses 125 over others (i.e., is orientation dependent) in order tochange the first profile 535 (as shown in FIGS. 5A or 5B) to a secondprofile 135 that is different from the first profile (e.g., to change acurved or normal profile to a faceted profile) (214-215, see FIG. 7). Asshown in the exploded view of the profile 135 in FIG. 7, the termfaceted profile as used herein refers to a profile having a first planarsurface 701, which extends downward at an angle from the top surface ofthe semiconductor layer 115, and a second planar surface 702, whichextends upward at an angle from the bottom surface of the recess,converging into a point 703 so as to create an angular shape 704projecting towards the channel region 150. For example, in asemiconductor layer having a horizontal surface orientation of {100}, ananisotropic wet etch process can be used to create faceted recesssidewalls with {111} orientation planes 710, 702 (i.e., facets)converging into a point 703 to create an angular shape 704 (e.g., a109.4 degree angular shape) projecting toward the channel region 150.This second etch process can further be performed so that it selectivelyetches the sidewalls 137 of the recesses 125 (i.e., the singlecrystalline semiconductor layer at the sidewalls of the recesses) overthe bottom surfaces 136 (i.e., over the amorphous regions 630 at thebottom surfaces 136) in order to keep the distance 160 separating thebottom surfaces 136 of the recesses 125 and the insulator layer 110essentially the same (e.g., approximately 10 nm or more) (214-215, seeFIG. 7).

An exemplary technique that can be used at processes 212-213 both toselectively etch different crystalline planes of semiconductor materialover others and to selectively etch single crystalline semiconductormaterial over amorphous semiconductor material is disclosed in U.S. Pat.No. 7,563,670, of Cheng et al., issued on Jul. 21, 2009 and incorporatedherein by reference. This technique provides for selectively etchingsingle crystalline semiconductor material, while only minimally etchingamorphous semiconductor material, by placing a wafer in an ambientlight, ambient open-top tank of an ammonium hydroxide (NH₄OH) solutionsuch that single crystalline and amorphous surfaces are simultaneouslyexposed to the solution. Etch temperatures and solution concentrationscan be selectively varied in order to achieve a desired etch selectivityratio, for example, a ratio of up to or greater than a 50:1 between theamount of single crystalline material being removed and amorphousmaterial being removed. Such a high etch selectivity ratio allows thefirst profile to be changed while only minimally reducing the distanceby which the bottom surfaces of the recesses are separated from theinsulator layer.

After the performing of the second etch process, an anneal process canbe performed to re-crystallize the amorphous regions 630, leavingcorresponding doped crystallized regions 130 within the singlecrystalline semiconductor layer 115 (216, see FIG. 8). The annealprocess can be performed at a temperature ranging from approximately400-1200° C. This temperature may vary depending upon anneal duration,the dopant and/or dopant concentration within the amorphous region and,thus, the temperature is more specifically a pre-selected temperaturesufficient to bring about the required re-crystallization. The annealprocess can be performed using any known anneal process techniques(e.g., furnace anneal, rapid thermal anneal, laser anneal, etc.).

After the anneal process, an epitaxial growth process is performed inorder to fill the recesses 125 with a FET-specific source/drainsemiconductor-stressor material 126 and create embedded and facetedsource/drain regions 190 (218, see FIG. 1). For example, for a PFET, theSilicon Germanium 126 can be epitaxially deposited into the recesses 125to form embedded source/drain regions 190 which function as stressorsthat impart compressive stress (i.e., a uni-axial compressive strainparallel to the direction of the current) on the PFET channel region 150(219). Similarly, for an NFET, Silicon Carbide 126 can be epitaxiallydeposited into the recesses 125 to form embedded source/drain regions190 which function as stressors that impart tensile stress (i.e., auni-axial tensile strain parallel to the direction of the current) onthe NFET channel region 150 (220). Creation of the amorphous regions 630at the bottom surfaces 136 of the recesses 125 (as shown in FIG. 6)prior to etching the recess sidewalls 137 ensures that enoughsemiconductor material from the layer 115 will remain below the recesses125 (as shown in FIG. 7) to seed this epitaxial deposition process.

It should be noted that during the epitaxial deposition process thesource/drain regions being formed can be in situ doped with suitablesource/drain dopants. For example, the source/drain regions for a PFETcan be in situ doped with a Group III dopant, such as Boron or Indium,whereas source/drain regions for an NFET can be implanted with a Group Vdopant, such as Arsenic, Phosphorous or Antimony. Alternatively, suchsource/drain dopants can be implanted following epitaxial deposition.

After the embedded and faceted source/drain stressor regions 190 areformed, as shown in FIG. 1, additional processing can be performed inorder to complete the planar FET structure 100 (222). This additionalprocessing can include, but is not limited to, silicide formation,interlayer dielectric deposition, contact formation, etc.

Referring to FIG. 1, also disclosed are embodiments of a planar FET 100formed according to the method embodiments described above. This planarFET 100 can comprise a substrate 105 (e.g., a silicon substrate), aninsulator layer 110 (e.g., a buried oxide (BOX) layer or other suitableinsulator layer) on the substrate 105 and a semiconductor layer 115 onthe insulator layer 110. Shallow trench isolation (STI) regions 120 canextend through the semiconductor layer 115 down to the insulator layer110 and can define a device region within the semiconductor layer 115. Agate stack 140 (e.g., a gate dielectric layer 141, a gate conductorlayer 142 on the gate dielectric layer 141 and a cap layer 143, such asa nitride cap layer, on the gate conductor layer 142) can be positionedabove a designated channel region 150 within the device region of thesemiconductor layer 115. Additionally, gate sidewall spacers 145 can bepositioned on opposing sides of the gate stack 140.

More specifically, the semiconductor layer can comprise a “thin” (e.g.,45-110 nm) or “ultra-thin” (e.g., sub-45 nm) single crystallinesemiconductor layer 115 (e.g., a single crystalline silicon layer) onthe insulator layer 110. The semiconductor layer 115 can furthercomprise recesses 125 (i.e., trenches, openings, etc.) on opposing sidesof the designated channel region 150. These recesses 125 can have innersidewalls 137 positioned laterally adjacent to the channel region 150with each inner sidewall 137 having a faceted profile 135. As shown inthe exploded view of the profile 135 in FIG. 7, the term faceted profileas used herein refers to a profile having a first planar surface 701,which extends downward at an angle from the top surface of thesemiconductor layer 115, and a second planar surface 702, which extendsupward at an angle from the bottom surface of the recess, converginginto a point 703 so as to create an angular shape 704 projecting towardsthe channel region 150. For example, in a semiconductor layer having ahorizontal surface orientation of {100}, an anisotropic wet etch processcan be used to create faceted recess sidewalls with {111} orientationplanes 710, 702 (i.e., facets) converging into a point 703 to create anangular shape 704 (e.g., a 109.4 degree angular shape) projecting towardthe channel region 150. The recesses 125 can further have bottomsurfaces 136 separated from the insulator layer 110 by a predetermineddistance 160 (e.g., a distance of at least 10 nm).

Additionally, the semiconductor layer 115 can comprise doped regions 130immediately adjacent to and aligned with the bottom surfaces 136 only ofthe recesses 125 such that the doped regions 130 are positioned betweenthe bottom surfaces 136 of the recesses 125 and the insulator layer 110,but not between the inner sidewalls 137 of the recesses 125 and thechannel region 150. As discussed in detail above, the doped regions 130can comprise a dopant implanted during processing to create amorphizedregions. Creation of the amorphous regions at the bottom surfaces of therecesses prior to etching the recess sidewalls to achieve the facetedprofile, followed by subsequent recrystallization ensures that enoughsemiconductor material remains below the recesses to seed epitaxialsource/drain material deposition. For both NFETs and PFETs, the dopantcan comprise any of Silicon, Germanium, Xenon, Argon, Nitrogen,Fluorine, Carbon, Sulfur, Oxygen, Neon, Krypton, etc. Alternatively, thedopant can be FET-specific. For example, for PFETs, the dopant can alsocomprise Boron or Indium, whereas, for NFETS, the dopant can alsocomprise Arsenic, Phosphorous, or Antimony. The thickness 165 of thedoped regions 130 can be less than approximately 10 nm and, moreparticularly, can be less than the distance 160 separating the bottomsurfaces 136 of the recesses 125 and the insulator layer 11. Thus, thedoped regions 130 do not contact the insulator layer 110.

The FET 100 can further comprise embedded source/drain stressor regions190 within the recesses 125. Specifically, the FET 100 can comprise anepitaxially grown layer of semiconductor material 126 that is within andfills the recesses 125. Depending upon the FET type, the semiconductormaterial 126 can be doped with p-type or n-type source/drain dopants andfurther can comprise a material specifically pre-selected so as toimpart either compressive stress or tensile stress on the channelregion. For example, the source/drain regions 190 for a PFET can bedoped with a Group III dopant, such as Boron or Indium, whereassource/drain regions 190 for an NFET can be implanted with a Group Vdopant, such as Arsenic, Phosphorous or Antimony. Additionally, for aPFET, the semiconductor material 126 within the recesses 125 cancomprise Silicon Germanium which functions as a stressor that impartscompressive stress (i.e., a uni-axial compressive strain parallel to thedirection of the current) on the PFET channel region 150. Similarly, foran NFET, the semiconductor material 126 within the recesses 125 cancomprise Silicon Carbide which functions as stressor that impartstensile stress (i.e., a uni-axial tensile strain parallel to thedirection of the current) on the NFET channel region 150.

Also disclosed herein are embodiments of a design structure associatedwith the above-described planar FET. This design structure can betangibly embodied in a machine readable medium for designing,manufacturing, and/or testing an integrated circuit and can comprise atleast instructions that, when executed by a computer-aided designsystem, generate a machine-executable representation of theabove-described planar FET. This design structure can comprise anetlist. Additionally, it can reside on a storage medium as a dataformat used for the exchange of layout data of integrated circuits or itcan reside in a programmable gate array.

Specifically, FIG. 9 shows a block diagram of an exemplary design flow900 used for example, in semiconductor IC logic design, simulation,test, layout, and manufacture. Design flow 900 includes processes,machines and/or mechanisms for processing design structures or devicesto generate logically or otherwise functionally equivalentrepresentations of the design structures and/or devices described aboveand shown in FIG. 1. The design structures processed and/or generated bydesign flow 900 may be encoded on machine-readable transmission orstorage media to include data and/or instructions that when executed orotherwise processed on a data processing system generate a logically,structurally, mechanically, or otherwise functionally equivalentrepresentation of hardware components, circuits, devices, or systems.Machines include, but are not limited to, any machine used in an ICdesign process, such as designing, manufacturing, or simulating acircuit, component, device, or system. For example, machines mayinclude: lithography machines, machines and/or equipment for generatingmasks (e.g. e-beam writers), computers or equipment for simulatingdesign structures, any apparatus used in the manufacturing or testprocess, or any machines for programming functionally equivalentrepresentations of the design structures into any medium (e.g. a machinefor programming a programmable gate array).

Design flow 900 may vary depending on the type of representation beingdesigned. For example, a design flow 900 for building an applicationspecific IC (ASIC) may differ from a design flow 900 for designing astandard component or from a design flow 900 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera® Inc.or Xilinx® Inc.

FIG. 9 illustrates multiple such design structures including an inputdesign structure 920 that is preferably processed by a design process910. Design structure 920 may be a logical simulation design structuregenerated and processed by design process 910 to produce a logicallyequivalent functional representation of a hardware device. Designstructure 920 may also or alternatively comprise data and/or programinstructions that when processed by design process 910, generate afunctional representation of the physical structure of a hardwaredevice. Whether representing functional and/or structural designfeatures, design structure 920 may be generated using electroniccomputer-aided design (ECAD) such as implemented by a coredeveloper/designer. When encoded on a machine-readable datatransmission, gate array, or storage medium, design structure 920 may beaccessed and processed by one or more hardware and/or software moduleswithin design process 910 to simulate or otherwise functionallyrepresent an electronic component, circuit, electronic or logic module,apparatus, device, or system such as those shown in FIG. 1. As such,design structure 920 may comprise files or other data structuresincluding human and/or machine-readable source code, compiledstructures, and computer-executable code structures that, when processedby a design or simulation data processing system, functionally simulateor otherwise represent circuits or other levels of hardware logicdesign. Such data structures may include hardware-description language(HDL) design entities or other data structures conforming to and/orcompatible with lower-level HDL design languages such as Verilog andVHDL, and/or higher level design languages such as C or C++.

Design process 910 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or logic structures shown in FIG. 1 to generate a netlist 980which may contain design structures such as design structure 920.Netlist 980 may comprise, for example, compiled or otherwise processeddata structures representing a list of wires, discrete components, logicgates, control circuits, I/O devices, models, etc. that describes theconnections to other elements and circuits in an integrated circuitdesign. Netlist 980 may be synthesized using an iterative process inwhich netlist 980 is resynthesized one or more times depending on designspecifications and parameters for the device. As with other designstructure types described herein, netlist 980 may be recorded on amachine-readable data storage medium or programmed into a programmablegate array. The medium may be a non-volatile storage medium such as amagnetic or optical disk drive, a programmable gate array, a compactflash, or other flash memory. Additionally, or in the alternative, themedium may be a system or cache memory, buffer space, or electrically oroptically conductive devices and materials on which data packets may betransmitted and intermediately stored via the Internet, or othernetworking suitable means.

Design process 910 may include hardware and software modules forprocessing a variety of input data structure types including netlist980. Such data structure types may reside, for example, within libraryelements 930 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 90 nm, etc.). The data structure types may further include designspecifications 940, characterization data 950, verification data 960,design rules 970, and test data files 985 which may include input testpatterns, output test results, and other testing information. Designprocess 910 may further include, for example, standard mechanical designprocesses such as stress analysis, thermal analysis, mechanical eventsimulation, process simulation for operations such as casting, molding,and die press forming, etc. One of ordinary skill in the art ofmechanical design can appreciate the extent of possible mechanicaldesign tools and applications used in design process 910 withoutdeviating from the scope and spirit of the invention. Design process 910may also include modules for performing standard circuit designprocesses such as timing analysis, verification, design rule checking,place and route operations, etc.

Design process 910 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processdesign structure 920 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 990.Design structure 990 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g. information stored in an IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures). Similar to designstructure 920, design structure 990 preferably comprises one or morefiles, data structures, or other computer-encoded data or instructionsthat reside on transmission or data storage media and that whenprocessed by an ECAD system generate a logically or otherwisefunctionally equivalent form of one or more of the embodiments of theinvention shown in FIG. 1. In one embodiment, design structure 990 maycomprise a compiled, executable HDL simulation model that functionallysimulates the device shown in FIG. 1.

Design structure 990 may also employ a data format used for the exchangeof layout data of integrated circuits and/or symbolic data format (e.g.information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design data structures). Designstructure 990 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by amanufacturer or other designer/developer to produce a device orstructure as described above and shown in FIG. 1. Design structure 990may then proceed to a stage 995 where, for example, design structure990: proceeds to tape-out, is released to manufacturing, is released toa mask house, is sent to another design house, is sent back to thecustomer, etc.

It should be understood that the corresponding structures, materials,acts, and equivalents of all means or step plus function elements in theclaims below are intended to include any structure, material, or act forperforming the function in combination with other claimed elements asspecifically claimed. Additionally, it should be understood that theabove-description of the present invention has been presented forpurposes of illustration and description, but is not intended to beexhaustive or limited to the invention in the form disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the invention.The embodiments were chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated. Well-known components and processingtechniques are omitted in the above-description so as to notunnecessarily obscure the embodiments of the invention.

Finally, it should also be understood that the terminology used in theabove-description is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention.For example, as used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. Furthermore, as used herein, the terms “comprises”,“comprising,” and/or “incorporating” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

Therefore, disclosed above are embodiments of a method of forming, on asilicon-on-insulator (SOI) wafer, a planar field effect transistor(FETs) with embedded and faceted source/drain stressors. The methodembodiments can incorporate a directional ion implant process to createamorphous regions at the bottom surfaces of source/drain recesses in asingle crystalline semiconductor layer of an SOI wafer. Then, an etchprocess selective to different crystalline planes over others andfurther selective to single crystalline semiconductor material overamorphous semiconductor material can be performed in order toselectively adjust the shape (i.e., the profile) of the recess sidewallswithout increasing the depth of the recesses. Subsequently, an annealprocess can be performed to re-crystallize the amorphous regions and anepitaxial deposition process can be used to fill the recesses withsource/drain stressor material. Creation of the amorphous regions at thebottom surfaces of the recesses prior to etching the recess sidewallsensures that enough semiconductor material will remain below therecesses to seed epitaxial deposition of the source/drain stressormaterial. Also disclosed are embodiments of a planar FET structure and adesign structure for the planar FET.

What is claimed is:
 1. A field effect transistor comprising: asubstrate; an insulator layer on said substrate; a semiconductor layeron said insulator layer, said semiconductor layer comprising: a channelregion; and recesses on opposing sides of said channel region, saidrecesses having inner sidewalls positioned laterally adjacent to saidchannel region with each inner sidewall having a faceted profile, saidrecesses further having bottom surfaces separated from said insulatorlayer by a distance and said semiconductor layer have doped regionsbetween said bottom surfaces and said insulator layer; and asemiconductor material within said recesses, said semiconductor materialbeing pre-selected so as to impart one of tensile stress and compressivestress on said channel region.
 2. The field effect transistor of claim1, said doped regions being immediately adjacent to and aligned withsaid bottom surfaces only of said recesses such that said doped regionsare positioned between said bottom surfaces of said recesses and saidinsulator layer and are further not positioned between said innersidewalls of said recesses and said channel region, and said dopedregions having a thickness that is less than said distance such thatsaid doped regions do not contact said insulator layer.
 3. The fieldeffect transistor of claim 1, said distance comprising at least 10 nm.4. The field effect transistor of claim 2, said thickness comprisingless than 10nm.
 5. The field effect transistor of claim 2, said fieldeffect transistor comprising a p-type field effect transistor, saidsemiconductor material comprising Silicon Germanium and said dopedregions comprising a dopant comprising any of Silicon, Germanium, Xenon,Argon, Nitrogen, Fluorine, Carbon, Sulfur, Oxygen, Neon, Krypton, Indiumand Boron.
 6. The field effect transistor of claim 2, said field effecttransistor comprising an n-type field effect transistor, saidsemiconductor material comprising Silicon Carbide and said doped regionscomprising a dopant comprising any of Silicon, Germanium, Xenon, Argon,Nitrogen, Fluorine, Carbon, Sulfur, Oxygen, Neon, Krypton, Arsenic,Phosphorous and Antimony.
 7. The field effect transistor of claim 1,said semiconductor layer having a thickness of less than 45nm.
 8. Adesign structure tangibly embodied in a machine readable medium fordesigning, manufacturing, and/or testing an integrated circuit, saiddesign structure comprising at least instructions that, when executed bya computer-aided design system, generate a machine-executablerepresentation of a field effect transistor, said field effecttransistor comprising a substrate; an insulator layer on said substrate;a semiconductor layer on said insulator layer, said semiconductor layercomprising: a channel region; recesses on opposing sides of said channelregion, said recesses having inner sidewalls positioned laterallyadjacent to said channel region with each inner sidewall having afaceted profile, said recesses further having bottom surfaces separatedfrom said insulator layer by a distance and said semiconductor layerhave doped regions between said bottom surfaces and said insulatorlayer; and a semiconductor material within said recesses, saidsemiconductor material being pre-selected so as to impart one of tensilestress and compressive stress on said channel region.
 9. The designstructure of claim 8, said design structure comprising a netlist. 10.The design structure of claim 8, said design structure residing on saidmachine readable medium as a data format used for exchange of layoutdata of integrated circuits.
 11. The design structure of claim 8, saiddesign structure residing in a programmable gate array.
 12. The designstructure of claim 8, said doped regions being immediately adjacent toand aligned with said bottom surfaces only of said recesses such thatsaid doped regions are positioned between said bottom surfaces of saidrecesses and said insulator layer and are further not positioned betweensaid inner sidewalls of said recesses and said channel region, and saiddoped regions having a thickness that is less than said distance suchthat said doped regions do not contact said insulator layer.
 13. Thedesign structure of claim 8, said distance comprising at least 10 nm.14. The design structure of claim 12, said thickness comprising lessthan 10nm.
 15. The design structure of claim 8, said field effecttransistor comprising a p-type field effect transistor, saidsemiconductor material comprising Silicon Germanium and said dopedregions comprising a dopant comprising any of Silicon, Germanium, Xenon,Argon, Nitrogen, Fluorine, Carbon, Sulfur, Oxygen, Neon, Krypton, Indiumand Boron.
 16. The design structure of claim 8, said field effecttransistor comprising an n-type field effect transistor, saidsemiconductor material comprising Silicon Carbide and said doped regionscomprising a dopant comprising any of Silicon, Germanium, Xenon, Argon,Nitrogen, Fluorine, Carbon, Sulfur, Oxygen, Neon, Krypton, Arsenic,Phosphorous and Antimony.
 17. The design structure of claim 8, saidsemiconductor layer having a thickness of less than 45nm.
 18. A fieldeffect transistor comprising: a substrate; an insulator layer on saidsubstrate; a semiconductor layer on said insulator layer, saidsemiconductor layer comprising: a channel region; and recesses onopposing sides of said channel region, said recesses having innersidewalls positioned laterally adjacent to said channel region with eachinner sidewall having a faceted profile; a semiconductor material withinsaid recesses, said semiconductor material being pre-selected so as toimpart one of tensile stress and compressive stress on said channelregion, said recesses further having bottom surfaces separated from saidinsulator layer by a distance; and said semiconductor layer furthercomprising doped regions immediately adjacent to and aligned with saidbottom surfaces only of said recesses such that said doped regions arepositioned between said bottom surfaces of said recesses and saidinsulator layer and are further not positioned between said innersidewalls of said recesses and said channel region, wherein a thicknessof said doped regions is less than said distance such that said dopedregions do not contact said insulator layer.
 19. The field effecttransistor of claim 18, said distance comprising at least 10nm.
 20. Thefield effect transistor of claim 18, said thickness comprising less than10nm.